The atomic structure of growth interfaces in Y–Ba–Cu–O thin films
The atomic structure of growth interfaces in Y–Ba–Cu–O thin films
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Y-Ba-Cu-O薄膜中生长界面的原子结构
DOI：
10.1557/jmr.1991.2264
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发表时间：
1991
影响因子：
2.7
通讯作者：
R. Kilaas
中科院分区：
文献类型：
--
作者：
R. Ramesh;A. Inam;D. Hwang;T. Ravi;T. Sands;X. Xi;X. Wu;Q. Li;T. Venkatesan;R. Kilaas
我们研究了在[001]钙钛矿或立方衬底上生长的Y-Ba-Cu-O薄膜的生长界面的原子结构。在780-820 °C范围内的衬底加热器温度下，在这些衬底上观察到c轴取向生长。在SrTiO_3上，第一层为BaO或CuO_2面，而在LaAlO_3上，第一层为CuO链层。a-b平面上的失配通过界面位错的形成来调节。衬底表面上的缺陷作为膜中的缺陷传播。这些缺陷主要是平移边界，在某些情况下是第二相。在较低的衬底加热器温度下，即，650-700 °C，a、b轴生长占主导地位。衬底表面上的缺陷和台阶在a、b轴取向膜的生长中更有害，因为它们倾向于有利于c轴取向畴的成核。这归因于c轴薄膜生长的台阶机制，其中表面台阶是良好的成核位点。
We have examined the atomic structure of growth interfaces in thin films of Y–Ba–Cu–O grown on [001] perovskite or cubic substrates. At substrate heater temperatures in the range of 780–820 °C c-axis oriented growth is observed on these substrates. On SrTiO_3, the first layer appears to be either a BaO or a CuO_2 plane while on LaAlO_3 the first layer appears to be a CuO chain layer. The mismatch on the a-b plane is accommodated by the formation of interface dislocations. Defects on the substrate surface propagate as defects in the film. These defects are primarily translational boundaries and in some cases second phases. At lower substrate heater temperatures, i.e., 650–700 °C, a, b-axis growth dominates. Defects and steps on the substrate surface are more detrimental in the growth of a, b-axis oriented films, since they tend to favor the nucleation of c-axis oriented domains. This is ascribed to the ledge mechanism of c-axis film growth, for which the surface steps are good nucleation sites.