Nucleation of oriented diamond particles on cobalt substrates
Nucleation of oriented diamond particles on cobalt substrates
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钴基体上定向金刚石颗粒的成核
DOI：
10.1063/1.360768
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发表时间：
1995
影响因子：
3.2
通讯作者：
J. Glass
中科院分区：
文献类型：
--
作者：
Wei Liu;D. Tucker;P. Yang;J. Glass
定向金刚石颗粒在钴衬底上的成核是通过一个多步骤的热丝化学气相沉积过程实现的，该过程包括种子、退火、成核和生长。在衬底上播撒金刚石粉、石墨粉或气态碳物种。扫描电子显微镜显示，在<0001>取向的单晶钴衬底上获得了<111>取向的金刚石颗粒。显微拉曼光谱表明，在钴衬底上生长的金刚石质量较高，半高宽为4.3 cm−1。在未被金刚石颗粒覆盖的衬底区域有一个很弱的石墨化峰，表明石墨共沉积受到了显著的抑制。采用扫描俄歇深度剖面分析对金刚石成核过程进行了表征。在实验观察的基础上，提出了成核模型。
Nucleation of oriented diamond particles on cobalt substrates has been achieved by a multistep, hot‐filament chemical vapor deposition process, which involves seeding, annealing, nucleation, and then growth. The substrates were seeded with either diamond powders, graphite powders, or gaseous carbon species. Scanning electron microscopy showed that 〈111〉 oriented diamond particles were obtained on 〈0001〉 oriented single crystal cobalt substrates. Micro‐Raman indicated that the quality of the diamond grown on the cobalt substrate was high, with a full width at half maximum of 4.3 cm−1. A very weak graphitic peak was observed on regions of the substrate not covered by the diamond particles, indicating that graphite codeposition was significantly suppressed. Scanning Auger depth profile analysis was done to characterize the diamond nucleation. Based on the experimental observations, a nucleation model is proposed.