Strain-enhanced power conversion efficiency of a BP/SnSe van der Waals heterostructure.
Strain-enhanced power conversion efficiency of a BP/SnSe van der Waals heterostructure.
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DOI：
10.1039/d0cp02163f
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发表时间：
2020-06
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影响因子：
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通讯作者：
Wenzhen Dou;A. Huang;Yuhang Ji;Xiaodong Yang;Yanbo Xin;Hongliang Shi;Mei Wang;Zhisong Xiao
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文献类型：
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作者：
Wenzhen Dou;A. Huang;Yuhang Ji;Xiaodong Yang;Yanbo Xin;Hongliang Shi;Mei Wang;Zhisong Xiao
采用第一性原理计算方法，设计并研究了一种新型的BP/SnSe货车德瓦尔斯（vdW）光伏异质结构.的BP/SnSe VDW异质结显示抑制光生载流子复合以及广泛和高的光吸收强度跨越可见光到深紫外区域达到105 cm-1的顺序。BP/SnSe vdW异质结的载流子迁移率表现出各向异性特性，达到约103 cm 2 V-1 s-1，具有11.96%的本征功率转换效率（PCE）。我们的研究结果表明，当BP和SnSe之间的导带偏移通过应变工程减少时，PCE可以增加到17.24%。这种独特而有利的性质表明，BP/SnSe vdW异质结构在光伏器件中具有很大的应用潜力。
A promising BP/SnSe van der Waals (vdW) photovoltaic heterostructure was designed and investigated by first-principles calculations. The BP/SnSe vdW heterostructure showed inhibition of photogenerated carrier recombination as well as broad and high optical absorption intensity spanning the visible to deep ultraviolet regions reaching the order of 105 cm-1. The carrier mobility of the BP/SnSe vdW heterostructure exhibited anisotropic characteristics reaching approximately 103 cm2 V-1 s-1, with an intrinsic power conversion efficiency (PCE) of 11.96%. Our results show that the PCE can be increased to 17.24% when the conduction band offset between BP and SnSe is reduced by strain engineering. The distinctive and favorable properties suggest that the BP/SnSe vdW heterostructure has great potential for use in photovoltaic devices.