Electrical properties of Al/Al4C3/4H-SiC diodes
Electrical properties of Al/Al4C3/4H-SiC diodes
复制标题
Al/Al4C3/4H-SiC 二极管的电性能
DOI：
10.1016/j.mssp.2017.10.012
复制
发表时间：
2018
影响因子：
4.1
通讯作者：
S. Koo
中科院分区：
文献类型：
--
作者：
So;S. Koo
本文研究了碳化铝（Al 4C 3）对4 H-SiC肖特基势垒二极管（SBD）金属/碳化硅（SiC）界面的影响。在高温（1000 °C）下的后退火工艺已被用于铝和碳之间的反应。所制造的器件的电流密度在5 V时测量为~ 13.4 A/cm 2，漏电流密度在− 5 V时小于~ 6.84 × 10−9A/cm 2。通过形成Al 4C 3，从Arrhenius图中提取的热活化能（EA= 0.35 eV）降低了~ 37%。实验结果表明，添加Al_4C_3层的样品的整流比为1.95 × 109，是参比SBD的33倍。SiC界面的结构缺陷可能是Al 4C 3层形成的原因。
The impact of aluminum carbide (Al4C3) at the metal/silicon-carbide (SiC) interface is presented here with respect to 4H-SiC Schottky barrier diodes (SBDs). A post-annealing process at a high temperature (1000 °C) has been employed for the reaction between the aluminum and the carbon. The current density of the fabricated device was measured as ~ 13.4 A/cm2at 5 V with a leakage current density of less than ~ 6.84 × 10−9A/cm2at − 5 V. The thermal-activation energy (EA= 0.35 eV) extracted from the Arrhenius plot decreased by ~ 37% via the formation of the Al4C3. According to the experiment results, the sample with the Al4C3layer yields a rectification ratio of 1.95 × 109that is 33 times higher than that of the reference SBDs. The structural defects of the SiC interface may be available for the formation of the Al4C3layer.