Sputter yields of single-and polycrystalline metals for application in focused ion beam technology
Sputter yields of single-and polycrystalline metals for application in focused ion beam technology
复制标题
用于聚焦离子束技术的单晶和多晶金属的溅射产率
DOI：
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发表时间：
2009
期刊：
影响因子：
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通讯作者：
H. Oepen
中科院分区：
文献类型：
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作者：
Yuliya Stark;R. Frömter;D. Stickler;H. Oepen
在本文中，我们提出的结果，从定量溅射产率测量轰击与30 keV的Ga+离子，这是常用的聚焦离子束系统。溅射产率是通过测量去除的体积获得的。我们描述了一种技术，允许精确的几何测量的材料去除多道铣削。测量了多晶坡莫合金和钴的产量数据以及硅和砷化镓的数据。对于铁和钨单晶，溅射产率的晶体取向的依赖关系进行了研究。独特的最小值和最大值的收益率观察到的入射角的函数，并变化高达10倍。的最小值的位置与低米勒指数结晶取向一致，因此可以归因于沟道的Ga+离子。与非晶材料的模拟结果的比较表明，从模拟的屈服值只适用于那些取向没有…
In this paper we present results from quantitative sputter yield measurements for bombardment with 30 keV Ga+ ions, which are commonly used in focused ion beam systems. The sputter yields were obtained from measurements of the removed volume. We describe a technique that allows the precise geometric measurement of the material removed by multipass milling. Yield data for polycrystalline Permalloy and cobalt are measured as well as data for silicon and gallium arsenide. For iron and tungsten single crystals, the dependence of the sputter yield on the crystalline orientation has been investigated. Distinctive minima and maxima of the yield are observed as a function of the incidence angle, and vary up to a factor of 10. The positions of the minima coincide with low-Miller-index crystalline orientations and can thus be attributed to channeling of the Ga+ ions. A comparison with simulation results for amorphous materials shows that yield values from simulation are only applicable for those orientations withou...