Evidence for quantum confinement in the photoluminescence of porous Si and SiGe
Evidence for quantum confinement in the photoluminescence of porous Si and SiGe
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DOI：
10.1063/1.106098
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发表时间：
1991-10
影响因子：
4
通讯作者：
S. Gardelis;J. Rimmer;P. Dawson;B. Hamilton;R. Kubiak;T. Whall;E. Parker
中科院分区：
文献类型：
--
作者：
S. Gardelis;J. Rimmer;P. Dawson;B. Hamilton;R. Kubiak;T. Whall;E. Parker
在分子束外延生长的p型Czochralski Si和p型Si0.85Ge0.15外延层中，采用阳极氧化技术对多孔表面进行了处理。SiGe层在加工前未松弛。我们已经从两个系统中观测到强烈的近红外光和可见光发射。对辐射和非辐射复合过程的分析表明，发射与局域于一维或零维结构中的激子的衰变一致。
We have used anodization techniques to process porous surface regions in p-type Czochralski Si and in p-type Si0.85Ge0.15 epitaxial layers grown by molecular beam epitaxy. The SiGe layers were unrelaxed before processing. We have observed strong near-infrared and visible light emission from both systems. Analysis of the radiative and nonradiative recombination processes indicate that the emission is consistent with the decay of excitons localized in structures of one or zero dimensions.