Design Challenges for Mid-UV Laser Diodes

Design Challenges for Mid-UV Laser Diodes
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DOI：
10.1109/rapid.2018.8508945
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发表时间：
2018-08
期刊：
2018 IEEE Research and Applications of Photonics In Defense Conference (RAPID)
影响因子：
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通讯作者：
Q. Guo;R. Kirste;P. Reddy;S. Mita;R. Collazo;Z. Sitar
Q. Guo;R. Kirste;P. Reddy;S. Mita;R. Collazo;Z. Sitar
中科院分区：
其他
文献类型：
--
作者：
Q. Guo;R. Kirste;P. Reddy;S. Mita;R. Collazo;Z. Sitar

文献摘要

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提出了一种优化的270 nm紫外激光器结构，预测的开启电流密度为5 kA/cm 2。讨论了可能的损耗机制，包括p-GaN接触层吸收，渐变AlGaN层对空穴注入的影响，以及由于Mg掺杂引起的损耗。
An optimized 270 nm UV laser structure is proposed with a predicted turn-on current density of 5 kA/cm2. The possible loss mechanisms are discussed, including p-GaN contact layer absorption, impact of a graded AlGaN layer on hole injection, and loss due to Mg doping.