Growth and characterization of axially periodic Zn2SnO4 (ZTO) nanostructures
Growth and characterization of axially periodic Zn2SnO4 (ZTO) nanostructures
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DOI：
10.1016/j.jcrysgro.2004.03.052
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发表时间：
2004-06-15
影响因子：
1.8
通讯作者：
Wang, G
中科院分区：
文献类型：
--
作者：
Wang, JX;Xie, SS;Wang, G
通过热蒸发法首次合成了透明半导体Zn₂SnO₄纳米线。这些纳米线沿纳米线轴向呈现出独特的周期性结构。通过改变反应物中的锌比例，可以获得不同形貌的ZTO（Zn₂SnO₄）纳米线。高分辨率透射显微镜（HRTEM）表征证实ZTO纳米线是结晶的。对ZTO纳米线的光致发光（PL）测量显示出一个中心位于约493nm的绿色发射带。我们的方法为将纳米晶体组装成一维周期性纳米结构提供了一种简单的途径。这些纳米结构在光电纳米器件和纳米系统中可能具有潜在应用。（C）2004爱思唯尔公司。版权所有。
Transparent semiconductor Zn2SnO4 nanowires were synthesized for the first time by the thermal evaporation method. The nanowires show a unique periodic structure along the axis of the nanowire. By varying the Zn ratio in the reactants, ZTO nanowires with different morphologies can be achieved. High-resolution transmission microscopy (HRTEM) characterization confirms that the ZTO nanowires are crystalline. PL (photoluminescence) measurement of the ZTO nanowires reveals a green emission band centered at similar to493 nm. Our method provides a simple approach for assembling nanocrystals into one-dimensional periodic nanostructures. These nanostructures may have potential applications for opto-electronic nanodevices and nanosystems. (C) 2004 Elsevier B.V. All rights reserved.