Strain compensation in InGaN-based multiple quantum wells using AlGaN interlayers
Strain compensation in InGaN-based multiple quantum wells using AlGaN interlayers
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DOI：
10.1063/1.5000519
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发表时间：
2017-10-01
期刊：
影响因子：
1.6
通讯作者：
Wierer, Jonathan J., Jr.
中科院分区：
文献类型：
--
作者：
Al Muyeed, Syed Ahmed;Sun, Wei;Wierer, Jonathan J., Jr.
提供了使用 AlGaN 夹层 (IL) 在基于 InGaN 的多量子阱 (MQW) 中进行应变补偿的数据。 MQW 由五个发射绿光周期的 InxGa1-xN/AlyGa1-yN/GaN 组成（λ 类似于 535 nm +/- 15 nm），AlyGa1-yN IL 的 Al 成分为 y = 0.42。 IL 的变化范围为 0 - 2.1 nm，并且 MQW 相对于 GaN 模板层的弛豫随着 IL 厚度的变化而变化，IL 厚度由关于（20 (2) over bar5）反射的倒易空间映射确定。弛豫的最小值出现在层间厚度为 1 nm 时，并且 MQW 几乎是 GaN 的假晶。较薄和较厚的 IL 均表现出松弛程度的增加。光致发光数据显示，具有 1 nm 厚 IL 的 MQW 具有增强的光谱强度和更窄的半峰全宽，这是具有较低缺陷密度和非辐射复合的假晶层的产物。 (C) 2017 年作者。
Data are presented on strain compensation in InGaN-based multiple quantum wells (MQW) using AlGaN interlayers (ILs). The MQWs consist of five periods of InxGa1-xN/AlyGa1-yN/GaN emitting in the green (lambda similar to 535 nm +/- 15 nm), and the AlyGa1-yN IL has an Al composition of y = 0.42. The IL is varied from 0 - 2.1 nm, and the relaxation of the MQW with respect to the GaN template layer varies with IL thickness as determined by reciprocal space mapping about the (20 (2) over bar5) reflection. The minimum in the relaxation occurs at an interlayer thickness of 1 nm, and the MQW is nearly pseudomorphic to GaN. Both thinner and thicker ILs display increased relaxation. Photoluminescence data shows enhanced spectral intensity and narrower full width at half maximum for the MQW with 1 nm thick ILs, which is a product of pseudomorphic layers with lower defect density and non-radiative recombination. (C) 2017 Author(s).