Direct observation of nitrogen location in molecular beam epitaxy grown nitrogen-doped ZnO.
Direct observation of nitrogen location in molecular beam epitaxy grown nitrogen-doped ZnO.
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DOI：
10.1063/1.2644531
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发表时间：
2006-02
影响因子：
8.6
通讯作者：
P. Fons;H. Tampo;A. Kolobov;M. Ohkubo;S. Niki;J. Tominaga;R. Carboni;F. Boscherini;S. Friedrich
中科院分区：
文献类型：
--
作者：
P. Fons;H. Tampo;A. Kolobov;M. Ohkubo;S. Niki;J. Tominaga;R. Carboni;F. Boscherini;S. Friedrich
ZnO是一种宽禁带的n型半导体，在光电应用方面具有很大的前景;主要的障碍是p型掺杂。氮，目前正在追求作为掺杂剂的最有前途的候选人，已被预测优先纳入ZnO晶格中的N-2分子的形式在O位时，使用等离子体源，导致补偿，而不是p型掺杂。我们证明这是不正确的，通过使用N K-边的X-射线吸收光谱和比较它们与第一原理计算表明，氮，事实上，纳入替代在O网站，它预计将作为一个受体。我们还检测到退火后形成的分子氮。这些结果表明，有效的p型掺杂的ZnO与N可能只适用于低温生长过程。
ZnO is a wide band gap, naturally n-type semiconductor with great promise for optoelectronic applications; the main obstacle yet to be overcome is p-type doping. Nitrogen, the most promising candidate currently being pursued as a dopant, has been predicted to preferentially incorporate into the ZnO lattice in the form of a N-2 molecule at an O site when a plasma source is used, leading to compensation rather than p-type doping. We demonstrate this to be incorrect by using N K-edge x-ray absorption spectra and comparing them with first-principles calculations showing that nitrogen, in fact, incorporates substitutionally at O sites where it is expected to act as an acceptor. We also detect the formation of molecular nitrogen upon annealing. These results suggest that effective p-type doping of ZnO with N may be possible only for low-temperature growth processes.