Elastic strain relaxation in patterned heteroepitaxial structures
Elastic strain relaxation in patterned heteroepitaxial structures
复制标题
图案化异质外延结构中的弹性应变弛豫
DOI：
--
复制
发表时间：
1994
期刊：
影响因子：
--
通讯作者：
H. Richter
中科院分区：
文献类型：
--
作者：
A. Fischer;H. Kühne;B. Roos;H. Richter
本文对刚性衬底上矩形异质外延层结构的平面内失配应力及其弹性松弛进行了二维分析。在公认的松弛膜应力模型的基础上，计算了失配应力随离台面边缘自由表面距离的分布。通过台地边缘孤立应力场的叠加，得到了有限异质外延薄膜台地在厚衬底上的双轴失配应力分布。所开发的形式允许确定应力值的变化作为图案化层-基底系统的材料和尺寸特征的函数。理论分析将应用于与Si或Ge的III-V化合物半导体集成。
We present a two-dimensional analysis of the in-plane misfit stress and its elastic relaxation in rectangular patterned heteroepitaxial layer structures on a rigid substrate. Based on the generally acknowledged model of relaxing film stress we calculate the distribution of the misfit stress versus distance from the free surface of a mesa edge. By superposition of the isolated stress fields of the mesa edges, we obtain the biaxial misfit stress distribution in a finite heteroepitaxial thin film mesa on a thick substrate. The formalism developed permits the determination of the variation of stress values as a function of material and size characteristics of the patterned layer-substrate system. The theoretical analysis will be applied to the III-V compound semiconductor integration with Si or Ge.