Doping of 4H-SiC with Group IV Elements
Doping of 4H-SiC with Group IV Elements
复制标题
IV族元素掺杂4H-SiC
DOI：
--
复制
发表时间：
2016
期刊：
影响因子：
--
通讯作者：
M. Bockstedte
中科院分区：
文献类型：
--
作者：
M. Krieger;M. Rühl;T. Sledziewski;Gunter Ellrott;Theresa Palm;H. B. Weber;M. Bockstedte
锗（Ge）掺杂在4H碳化硅（SiC）中，由于其电导率的提高，近年来引起了广泛的关注。在这项工作中，我们报告了一种实验和理论方法来阐明这种效应。在n型4H-SiC中注入了Ge和第二候选元素锡（Sn）。尽管期望Ge和Sn具有等电性，但与相同模拟初始植入损伤的惰性气体植入相比，观察到更有效的植入诱导缺陷退火。特别是，观察到明显的Z1/2缺陷的强烈减少。在平衡条件下的密度泛函理论计算表明，Ge主要结合在硅晶格的取代位上，而没有在带隙中产生新的电荷跃迁能级。其他ge相关缺陷的低丰度表明动力学机制应该负责观察到的IV族掺杂效应。
Germanium (Ge) doping of 4H silicon carbide (SiC) has recently attracted attention because a conductivity-enhancing effect was reported. In this work, we report on an experimental and theoretical approach to elucidate this effect. Ge and tin (Sn) – a second candidate of group IV elements – have been implanted into n-type 4H-SiC. Despite the expected isoelectric nature of Ge and Sn, a more efficient annealing of implantation-induced defects was observed compared to noble gas implantation with identical simulated initial implantation damage. In particular, a strong reduction of the prominent Z1/2 defect was observed. Density functional theory calculations under equilibrium conditions show that Ge is mainly incorporated on a substitutional silicon lattice site without creating new charge transition levels in the bandgap. The low abundance of other Ge-related defects suggests that kinetic mechanisms should be responsible for the observed effect of group IV doping.