Modifying single-crystalline silicon by femtosecond laser pulses: an analysis by micro Raman spectroscopy, scanning laser microscopy and atomic force microscopy
Modifying single-crystalline silicon by femtosecond laser pulses: an analysis by micro Raman spectroscopy, scanning laser microscopy and atomic force microscopy
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DOI：
10.1016/s0169-4332(03)00881-x
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发表时间：
2004-01-15
影响因子：
6.7
通讯作者：
Meixner, AJ
中科院分区：
文献类型：
--
作者：
Bonse, J;Brzezinka, KW;Meixner, AJ
利用微拉曼光谱（mu-RS）、原子力显微镜和扫描激光显微镜研究了130飞秒（fs） Ti：蓝宝石激光脉冲（波长800 nm）在空气中对单晶硅表面的修饰作用。根据激光辐照强度的不同，研究表明在某些区域存在薄的非晶顶层以及烧蚀和再结晶区。定量地确定了熔炼、烧蚀和多晶再结晶的单脉冲阈值影响。发现了几种不同的地形表面结构（边缘和突起）。本文结合近年来激光辐照硅的研究，讨论了它们的形成。结合薄膜光学模型，通过两种独立的非破坏性光学方法确定了非晶层的厚度在几个10 nm左右。(C) 2003 Elsevier B.V.版权所有
The surface modification of single-crystalline silicon induced by single 130 femtosecond (fs) Ti:sapphire laser pulses (wavelength 800 nm) in air is investigated by means of micro Raman spectroscopy (mu-RS), atomic force microscopy and scanning laser microscopy. Depending on the laser fluence, in some regions the studies indicate a thin amorphous top-layer as well as ablated and recrystallized zones. The single-pulse threshold fluences for melting, ablation and polycrystalline recrystallization are determined quantitatively. Several different topographical surface structures (rims and protrusions) are found. Their formation is discussed in the context of recent studies of the laser irradiation of silicon. In combination with a thin-film optical model, the thickness of the amorphous layer is determined by two independent and nondestructive optical methods to be in the order of several 10 nm. (C) 2003 Elsevier B.V. All rights reserved.