Temperature dependent metal-induced lateral crystallization of amorphous SiGe on insulating substrate
Temperature dependent metal-induced lateral crystallization of amorphous SiGe on insulating substrate
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DOI：
10.1063/1.2374849
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发表时间：
2006-11
影响因子：
4
通讯作者：
H. Kanno;K. Toko;T. Sadoh;M. Miyao
中科院分区：
文献类型：
--
作者：
H. Kanno;K. Toko;T. Sadoh;M. Miyao
研究了SiO2衬底上非晶SiGe薄膜的金属诱导横向晶化（MILC）随Ge含量（0%-100%）和退火温度（320-550°C）的变化。高温退火（>500°C）导致具有高Ge分数（>70%）的非晶SiGe中的自发成核。这抑制了MILC的发展。通过降低退火温度（20μm），即使对于高Ge分数（>70%）的Ni图形，也可以观察到自发成核现象。通过这种方式，对于具有全Ge分数（0%-100%）的样品，实现了非晶SiGe的MILC。
Metal-induced lateral crystallization (MILC) of amorphous SiGe films on SiO2 has been investigated as a function of Ge fraction (0%–100%) and annealing temperature (320–550°C). High temperature annealing (>500°C) caused spontaneous nucleation in amorphous SiGe with a high Ge fraction (>70%). This suppressed the progress of MILC. Spontaneous nucleation was significantly suppressed by lowering the annealing temperature ( 20μm) were observed around Ni patterns even for high Ge fractions (>70%). In this way, MILC of amorphous SiGe was achieved for samples with whole Ge fractions (0%–100%).