Positive Gate Bias Instability Induced by Diffusion of Neutral Hydrogen in Amorphous In-Ga-Zn-O Thin-Film Transistor
Positive Gate Bias Instability Induced by Diffusion of Neutral Hydrogen in Amorphous In-Ga-Zn-O Thin-Film Transistor
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DOI：
10.1109/led.2014.2327234
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发表时间：
2014-08-01
影响因子：
4.9
通讯作者：
Kamiya, Toshio
中科院分区：
文献类型：
--
作者：
Domen, Kay;Miyase, Takaya;Kamiya, Toshio
研究了非晶 In-Ga-Zn-O 薄膜晶体管中恒定正栅极偏压应力不稳定的根源。应力测试期间的阈值电压偏移（Delta V-th）表现出两种不同的行为：1）幂函数型和2）对数函数型，具体取决于热处理气氛和温度。热脱附光谱表明，随着H-2脱附量的增加，Delta V-th行为从对数函数型变为幂函数型。此外，Delta V-th 的恢复行为不受栅极偏压的影响。这些结果可以通过中性氢的扩散限制过程来解释，该过程发生在沟道-绝缘体界面附近 2 nm 内。
Origin of constant positive gate bias stress instability in amorphous In-Ga-Zn-O thin-film transistor is studied. Threshold voltage shift (Delta V-th) during the stress test exhibits two different behaviors: 1) a power function-type and 2) a logarithmic function-type depending on thermal treatment atmosphere and temperature. Thermal desorption spectroscopy indicated that the Delta V-th behavior changes from the log-function type to the power-function type as the amount of H-2 desorption increases. Furthermore, the recovery behavior of Delta V-th was not affected by gate bias. These results are explained by a diffusion-limited process of neutral hydrogen, which occurs within 2 nm in the vicinity of the channel-insulator interface.