Temperature stable mid-infrared GaInAsSb/GaSb Vertical Cavity Surface Emitting Lasers (VCSELs).
Temperature stable mid-infrared GaInAsSb/GaSb Vertical Cavity Surface Emitting Lasers (VCSELs).
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DOI：
10.1038/srep19595
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发表时间：
2016-01-19
影响因子：
4.6
通讯作者：
Sweeney SJ
中科院分区：
文献类型：
--
作者：
Ikyo AB;Marko IP;Hild K;Adams AR;Arafin S;Amann MC;Sweeney SJ
基于GaInAsSb/GaSb的中红外垂直腔面发射激光器(VCSEL)工作在2~3微米的中红外波段，对于低成本的气体监测应用具有重要意义。本文讨论了发射波长为2.6 μm的垂直腔面发射激光器的效率和温度灵敏度，以及为提供温度稳定工作而必须控制的工艺。结果表明，非辐射俄歇复合控制了阈值电流，限制了器件在室温下的性能。重要的是，我们证明了非辐射复合和增益峰-腔模失谐的共同影响决定了垂直腔面发射激光器的整体温度灵敏度。结果表明，只有在较大的增益峰-腔模失谐的情况下，才能改善VCSEL在室温附近的温度稳定运行，抵消了非辐射复合随温度升高而增加的显著影响，这是中红外VCSEL设计中必须考虑的物理效应。
GaInAsSb/GaSb based quantum well vertical cavity surface emitting lasers (VCSELs) operating in mid-infrared spectral range between 2 and 3 micrometres are of great importance for low cost gas monitoring applications. This paper discusses the efficiency and temperature sensitivity of the VCSELs emitting at 2.6 μm and the processes that must be controlled to provide temperature stable operation. We show that non-radiative Auger recombination dominates the threshold current and limits the device performance at room temperature. Critically, we demonstrate that the combined influence of non-radiative recombination and gain peak – cavity mode de-tuning determines the overall temperature sensitivity of the VCSELs. The results show that improved temperature stable operation around room temperature can only be achieved with a larger gain peak – cavity mode de-tuning, offsetting the significant effect of increasing non-radiative recombination with increasing temperature, a physical effect which must be accounted for in mid-infrared VCSEL design.