Nonuniversal conductance quantization in quantum wires
Nonuniversal conductance quantization in quantum wires
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DOI：
10.1103/physrevlett.77.4612
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发表时间：
1996-11-25
影响因子：
8.6
通讯作者：
West, KW
中科院分区：
文献类型：
--
作者：
Yacoby, A;Stormer, HL;West, KW
我们已经测量了高质量的量子阱制造的GaAs-AlGaAs的输运特性，通过使用解理边缘过生长。当导线中的电子密度变化时，低温电导被量子化。虽然电导平台的值是可重现的，但它们偏离通用值2 e（2）/h的倍数多达25%。随着温度或去偏压的增加，电导阶跃接近普适值。数据的几个方面可以用Luttinger液体理论定性地解释，尽管这样的解释仍然存在重大的不一致。
We have measured the transport properties of high-quality quantum wins fabricated in GaAs-AlGaAs by using cleaved edge overgrowth. The low temperature conductance is quantized as the electron density in the wire is varied. While the values of the conductance plateaus are reproducible, they deviate from multiples of the universal value of 2e(2)/h by as much as 25%. As the temperature or de bias increases the conductance steps approach the universal value. Several aspects of the data can be explained qualitatively using Luttinger liquid theory although then remain major inconsistencies with such an interpretation.