Effects of Al and N2 Flow Sequences on the Interface Formation of AlN on Sapphire by EVPE
Effects of Al and N2 Flow Sequences on the Interface Formation of AlN on Sapphire by EVPE
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DOI：
10.3390/cryst7050123
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发表时间：
2017-05-01
期刊：
影响因子：
2.7
通讯作者：
Kawakami, Yoichi
中科院分区：
文献类型：
--
作者：
Kishimoto, Katsuhiro;Funato, Mitsuru;Kawakami, Yoichi
研究了一种以Al和N-2为前驱体的新型AlN块体制备方法--基元源气相外延(EVPE)法在蓝宝石衬底上生长AlN薄膜的界面形成机理。在衬底温度达到生长温度后提供N-2[工艺N-2(GT)]会由于蓝宝石的热分解导致界面变得粗糙。在N-2(GT)过程中偶尔会发生自分离，这表明粗糙的界面产生了应变很小的自分离薄膜。另一方面，从室温开始提供N-2可以形成相对光滑的空洞界面，这可以通过氮化蓝宝石表面和铝源之间的反应来实现。
The interface formation mechanisms of AlN films on sapphire substrates grown by the elementary source vapor phase epitaxy (EVPE) method, which is a new AlN bulk fabrication method using Al and N-2 as precursors, are investigated. Supplying N-2 after the substrate temperature reaches the growth temperature [Process N-2(GT)] causes the interface to become rough due to the thermal decomposition of sapphire. Self-separation occasionally occurs with the Process N-2(GT), suggesting that the rough interface generates self-separating films with little strain. On the other hand, supplying N-2 beginning at room temperature forms a relatively smooth interface with voids, which can be realized by the reaction between a nitrided sapphire surface and an Al source.