Feng Shui of supercomputer memory positional effects in DRAM and SRAM faults
Feng Shui of supercomputer memory positional effects in DRAM and SRAM faults
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DOI：
10.1145/2503210.2503257
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发表时间：
2013-11
期刊：
影响因子：
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通讯作者：
Vilas Sridharan;Jon Stearley;Nathan Debardeleben;S. Blanchard;S. Gurumurthi
中科院分区：
文献类型：
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作者：
Vilas Sridharan;Jon Stearley;Nathan Debardeleben;S. Blanchard;S. Gurumurthi
最近的一些出版物证实，故障是常见的高性能计算系统。因此，有必要进一步关注这种计算系统所经历的故障。在本文中，我们提出了在大型高性能计算系统中的DRAM和SRAM故障的研究。我们的目标是了解生产环境中影响故障的因素。我们研究了老化对DRAM的影响，发现在DRAM寿命的前两年，从永久性故障到瞬时故障的显著转变。我们研究了DRAM供应商的影响，发现供应商之间的故障率差异超过4倍。我们研究了DRAM设备和数据中心故障的物理位置;与之前的研究相反，我们没有发现任何相关性。最后，我们研究了高度和机架位置对SRAM故障的影响，发现，正如预期的那样，高度对SRAM故障有很大的影响，机架顶部的位置与高出20%的故障率相关。
Several recent publications confirm that faults are common in high-performance computing systems. Therefore, further attention to the faults experienced by such computing systems is warranted. In this paper, we present a study of DRAM and SRAM faults in large high-performance computing systems. Our goal is to understand the factors that influence faults in production settings. We examine the impact of aging on DRAM, finding a marked shift from permanent to transient faults in the first two years of DRAM lifetime. We examine the impact of DRAM vendor, finding that fault rates vary by more than 4x among vendors. We examine the physical location of faults in a DRAM device and in a data center; contrary to prior studies, we find no correlations with either. Finally, we study the impact of altitude and rack placement on SRAM faults, finding that, as expected, altitude has a substantial impact on SRAM faults, and that top of rack placement correlates with 20% higher fault rate.