A new crystallization technique of Si films on glass substrate using thermal plasma jet
A new crystallization technique of Si films on glass substrate using thermal plasma jet
复制标题
玻璃基板上热等离子体射流硅薄膜结晶新技术
DOI：
10.1016/j.apsusc.2004.10.059
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发表时间：
2005
影响因子：
6.7
通讯作者：
S. Miyazaki
中科院分区：
文献类型：
--
作者：
H. Kaku;S. Higashi;H. Taniguchi;H. Murakami;S. Miyazaki
提出了一种利用热等离子体射流在玻璃衬底上晶化Si薄膜的新方法，并研究了等离子体源输入功率和衬底扫描速度对氢化非晶硅（a-Si：H）薄膜晶化的影响。在适当的输入功率和扫描速度条件下，较高的输入功率和较低的扫描速度有利于硅薄膜的结晶。该技术可使硅膜在厚度上均匀地结晶，即使膜厚为101 μm。
We have proposed a new crystallization technique of Si films on glass substrates using thermal plasma jet, and studied the crystallization of hydrogenated amorphous Si (a-Si:H) films as functions of the input power to the plasma source and the scanning speed of the substrate. Within the proper conditions of the input power and the scanning speed for the crystallization of Si films, higher input power and slower scanning speed lead to higher crystallinity. This technique enables as to crystallize Si films uniformly in the thickness even for the films as thick as ∼1μm.