Electroluminescence from the InGaN/GaN Superlattices Interlayer of Yellow LEDs with Large V-Pits Grown on Si (111)
Electroluminescence from the InGaN/GaN Superlattices Interlayer of Yellow LEDs with Large V-Pits Grown on Si (111)
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Si 上生长的具有大 V 坑的黄色 LED 的 InGaN_GaN 超晶格中间层的电致发光
DOI：
10.1088/0256-307x/35/5/057303
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发表时间：
2018
影响因子：
3.5
通讯作者：
Jiang Feng-yi
中科院分区：
文献类型：
--
作者：
Tao Xi-xia;Mo Chun-lan;Liu Jun-lin;Zhang Jian-li;Wang Xiao-lan;Wu Xiao-ming;Xu Long-quan;Ding Jie;Wang Guang-xu;Jiang Feng-yi
在具有V型凹坑的黄色LED中观察到源自InGaN/GaN超晶格（SL）中间层的蓝光发射，该V型凹坑嵌入在量子威尔斯（QW）中，揭示了足够的空穴穿过QW进入远离p型层的SL。在V型坑嵌入式LED中，空穴传输有两条路径：通过平坦的c平面区域或通过V型坑的侧壁。结果表明，空穴在SL中的输运过程是从V型坑的侧壁注入的，并且工作温度、电流密度和V型坑的尺寸对空穴输运过程有显著影响。四个运动的可能性进行了讨论时，孔流通过侧壁。这些都有助于更好地理解空穴输运和器件设计。
A blue emission originated from InGaN/GaN superlattice (SL) interlayer is observed in the yellow LEDs with V-pits embedded in the quantum wells (QWs), revealing that sufficient holes have penetrated through the QWs into SLs far away from the p-type layer. In the V-pits embedded LEDs, hole transport has two paths: via the flat c-plane region or via the sidewalls of V-pits. It is proved that the holes in SLs are injected from the sidewalls of V-pits, and the transportation process is significantly affected by working temperature, current density, and the size of V-pits. Four motion possibilities are discussed when the holes flow via the sidewalls. All these may contribute to a better understanding of hole transport and device design.