The potential of diamond and SiC electronic devices for microwave and millimeter-wave power applications
The potential of diamond and SiC electronic devices for microwave and millimeter-wave power applications
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DOI：
10.1109/5.90128
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发表时间：
1991-05
期刊：
影响因子：
--
通讯作者：
R. Trew;J.B. Yan;P. M. Mock
中科院分区：
文献类型：
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作者：
R. Trew;J.B. Yan;P. M. Mock
综述了碳化硅和金刚石在制造微波和毫米波电子器件方面的潜力。结果表明，这两种材料的特性都可以使射频电子器件的性能接近或超过由常用的半导体、Si、GaAs和InP制成的器件的性能。给出了几种候选高频器件结构：金属半导体场效应晶体管(MESFET)、冲击雪崩渡越时间(IMPATT)二极管和双极结晶体管(BJT)的射频性能势的理论计算。与之相比，钻石MESFET能够产生超过200 W的X波段功率，而GaAsMESFET的功率约为8 W。由碳化硅制成的器件应该在这些限制范围内工作。在微波频率下，与Si、GaAs和InP器件相比，钻石和SiCIMPATT二极管还能够产生更高的射频功率。射频性能随着频率的增加而降低，在毫米波频率上只有轻微的改善。由宽禁带材料制成的双极晶体管可能只在超高频和低微波频率下才能提供更好的射频性能。>；
The potential of SiC and diamond for producing microwave and millimeter-wave electronic devices is reviewed. It is shown that both of these materials possess characteristics that may permit RF electronic devices with performance similar to or greater than what is available from devices fabricated from the commonly used semiconductors, Si, GaAs, and InP. Theoretical calculations of the RF performance potential of several candidate high-frequency device structures are presented: the metal semiconductor field-effect transistor (MESFET), the impact avalanche transit-time (IMPATT) diode, and the bipolar junction transistor (BJT). Diamond MESFETs are capable of producing over 200 W of X-band power as compared to about 8 W for GaAs MESFETs. Devices fabricated from SiC should perform between these limits. Diamond and SiC IMPATT diodes also are capable of producing improved RF power compared to Si, GaAs, and InP devices at microwave frequencies. RF performance degrades with frequency and only marginal improvements are indicated at millimeter-wave frequencies. Bipolar transistors fabricated from wide bandgap material probably offer improved RF performance only at UHF and low microwave frequencies. >