Iridium oxide deposited by pulsed dc-sputtering for stimulation electrodes
Iridium oxide deposited by pulsed dc-sputtering for stimulation electrodes
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DOI：
10.1088/0960-1317/19/7/074009
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发表时间：
2009-07
影响因子：
2.3
通讯作者：
A. V. Ooyen;G. Topalov;G. Ganske;Wilfried Mokwa;U. Schnakenberg
中科院分区：
文献类型：
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作者：
A. V. Ooyen;G. Topalov;G. Ganske;Wilfried Mokwa;U. Schnakenberg
采用脉冲直流反应溅射技术沉积氧化铱薄膜。脉冲频率和氧气流量在几个沉积周期内变化，关于刺激电极应用。进行表面和电化学分析以进行沉积评估。研究了氧气流量对反应溅射薄膜形貌和电化学性能的影响。在0.016 mbar工作压力、100 kHz脉冲频率和1 µs脉冲宽度下沉积的薄膜的最佳表面结构和电化学性能可以在8至10 sccm的氧气流量下实现。
A pulsed-dc reactive sputtering technique was used for iridium oxide thin-film deposition. Pulsing frequency and oxygen flow were varied over several deposition cycles, regarding stimulation electrode applications. Surface and electrochemical analysis were performed for deposition evaluation. The results show the influence of the oxygen flow to the morphology and the electrochemical properties of the reactively sputtered films. Optimal surface structure and electrochemical properties for films deposited at 0.016 mbar working pressure, 100 kHz pulse frequency and 1 µs pulsewidth can be achieved at oxygen flows around 8 to 10 sccm.