Si-Wafer Bending Technique for a Three-Dimensional Microoptical Bench
Si-Wafer Bending Technique for a Three-Dimensional Microoptical Bench
复制标题
三维微光学工作台的硅片弯曲技术
DOI：
10.1143/jjap.42.4063
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发表时间：
2003
影响因子：
1.5
通讯作者：
K. Hane
中科院分区：
文献类型：
--
作者：
M. Ishimori;J. Song;M. Sasaki;K. Hane
我们提出并证明了一个硅晶片弯曲技术，用于制备三维微光学工作台（MOB）。三维MOB的制备过程是基于通常的平面光刻、各向异性湿法刻蚀和光刻胶V型槽接头的制备。弯曲角度由固定晶片的夹具控制。该夹具通过常规机械加工单独制备。弯曲角度的测量精度在±0.2°以内。这种方法的优点是可以通过改变夹具来设置任意弯曲角度，而不受微加工的限制。这是通常的加工技术和实现三维微结构的微加工技术的组合。这种简单而灵活的弯曲技术可以产生三维MOB，光学元件可以通过芯片键合或通过制备对准引导件在其上对准。
We propose and demonstrate a Si-wafer bending technique for preparing a three-dimensional microoptical bench (MOB). The process for preparing the three-dimensional MOB is based on the usual planar photolithography, anisotropic wet etching and preparation of the photoresist V-groove joint. The bending angle is controlled by the jig on which the wafer is fixed. This jig is prepared separately by the usual machining. The measured accuracy of the bending angle is within ±0.2°. The advantage of this method is that an arbitrary bending angle can be set by changing the jig without the restriction of micromachining. This is a combination of the usual machining technique and the micromachining technique which realizes a three-dimensional microstructure. This simple and flexible bending technique can yield three-dimensional MOBs on which optical elements can be aligned by chip bonding or by preparing an alignment guide.