Highly crystalline 5H-polytype of sp3-bonded boron nitride prepared by plasma-packets-assisted pulsed-laser deposition: An ultraviolet light emitter at 225 nm
Highly crystalline 5H-polytype of sp3-bonded boron nitride prepared by plasma-packets-assisted pulsed-laser deposition: An ultraviolet light emitter at 225 nm
复制标题
通过等离子体包辅助脉冲激光沉积制备高结晶 5H 多型 sp3 键合氮化硼：225 nm 紫外光发射器
DOI：
10.1063/1.1527987
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发表时间：
2002
影响因子：
4
通讯作者：
S. Samukawa
中科院分区：
文献类型：
--
作者：
S. Komatsu;K. Kurashima;H. Kanda;K. Okada;M. Mitomo;Y. Moriyoshi;Y. Shimuzu;M. Shiratani;T. Nakano;S. Samukawa
通过脉冲激光蒸发BN，生长出高度结晶的5 H多型形式的sp3键合氮化硼（BN），其中同步反应等离子体包辅助气相晶体生长。用透射电子衍射和电子能量损失谱证实了产物微晶的结构（约1.5 μm）。该材料在室温下通过阴极发光证明在225 nm处具有尖锐的主导带，并且相应的单色图像显示它们均匀地发射紫外光。考虑到立方BN已经被掺杂为p型和n型半导体，这种材料可以应用于在没有真空的情况下工作的UV区域的几乎最深极限下工作的发光器件。
Highly crystalline 5H-polytypic form of sp 3 -bonded boron nitride (BN) was grown by pulsed-laser-vaporization of BN, where synchronous reactive-plasma packets assisted the crystal growth in the vapor phase. The structure of the product crystallites (∼5 μm) was confirmed by using transmission electron diffraction and electron energy loss spectroscopy. This material proved to have a sharp and dominant band at 225 nm by cathodoluminescence at room temperatures and corresponding monochromatic images revealed that they uniformly emitted the ultraviolet light. Considering that cubic BN has already been doped as p- and n-type semiconductors, this material may be applied to the light-emitting devices working at almost the deepest limit of the UV region that is functional without vacuum.