Top-down approach: Fabrication of silicon nanowires using scanning electron microscope based electron beam lithography method and inductively coupled plasma-reactive ion etching
Top-down approach: Fabrication of silicon nanowires using scanning electron microscope based electron beam lithography method and inductively coupled plasma-reactive ion etching
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自上而下的方法：使用基于扫描电子显微镜的电子束光刻方法和电感耦合等离子体反应离子蚀刻制造硅纳米线
DOI：
10.1063/1.3377829
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发表时间：
2010
期刊：
影响因子：
--
通讯作者：
N. H. N. Hamat
中科院分区：
文献类型：
--
作者：
M. Nor;U. Hashim;N. H. Halim;N. H. N. Hamat
“自上而下”的方法用于使用基于扫描电子显微镜（SEM）的电子束光刻（EBL）方法来制造硅纳米线。硅纳米线或一维纳米线被广泛认为是开发某些先进纳米级器件的重要元素。使用这种方法在我们的洁净室成功制造了线宽为 50 nm 的硅纳米线。所使用的方法包括基于 SEM 的 EBL 方法，然后使用感应耦合等离子体反应离子蚀刻 (ICP-RIE) 减小尺寸。此外，硅纳米线的直径和长度可以精确控制。本文对硅纳米线的形成（包括 EBL 系统和制造工艺）进行了回顾和讨论。高功率显微镜 (HPM)、SEM 和原子力显微镜 (AFM) 用于表征硅纳米线。
The “top‐down” approach is used to fabricate Silicon Nanowires using Scanning Electron Microscope (SEM) based Electron Beam Lithography (EBL) method. Silicon Nanowires or one dimensional nanowires are widely recognized as important elements in development of certain advance nanoscale devices. The Silicon Nanowires with line‐width of 50 nm are successfully fabricated at our clean room using this approach. The approach used includes SEM based EBL method, followed by size reduction using Inductively Coupled Plasma—Reactive Ion Etching (ICP—RIE). In addition, the diameter and the length of the Silicon Nanowires can be precisely controlled. In this paper, the Silicon Nanowires formation which includes the EBL system and fabrication processes have been reviewed and discussed. High Power Microscope (HPM), SEM and Atomic Force Microscopy (AFM) were used to characterize the Silicon Nanowires.