Greatly enhanced performance of InGaN/GaN nanorod light emitting diodes
Greatly enhanced performance of InGaN/GaN nanorod light emitting diodes
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DOI：
10.1002/pssa.201100456
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发表时间：
2012-03
期刊：
影响因子：
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通讯作者：
J. Bai;Q. Wang;T. Wang
中科院分区：
文献类型：
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作者：
J. Bai;Q. Wang;T. Wang
For the first time we demonstrate InGaN/GaN‐based nanorod light emitting diodes (LEDs) with both very good current–voltage (I–V) characteristics and significantly enhanced emission. Our LED nanorods are fabricated based on InGaN/GaN LED epiwafers commercially available using self‐organised Ni nano‐mask and inductively coupled plasma (ICP) etching. In comparison with the conventional LED fabricated on the same wafer, our nanorod LEDs exhibit a great emission enhancement with a factor of 1.8. An extra novel step for device fabrication has been implemented, leading to significantly improved I–V characteristics with a forward‐bias voltage of 3.26 V at an injection current of 20 mA, while the forward‐bias voltage reported so far is typically 5–7 V for current nanorod LEDs. It is worth highlighting that our III‐nitride nanorod LEDs can be truly employed for practical applications.
