Study for AC loss reduction in Bi2223 tapes by introducing oxide barriers
Study for AC loss reduction in Bi2223 tapes by introducing oxide barriers
复制标题
通过引入氧化物阻挡层降低 Bi2223 带材交流损耗的研究
DOI：
10.1007/s10948-010-0875-9
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发表时间：
2011
影响因子：
1.8
通讯作者：
P.X. Zhang
中科院分区：
文献类型：
--
作者：
R. Inada;Y. Okumura;A. Oota;C. S. Li; P.X. Zhang
本文介绍了我们最近的活动，为低损耗的Bi 2223磁带与中间氧化物屏障的发展。为了抑制烧结过程中Bi_（2223）相形成的副作用，选择SrZrO_3作为阻挡层材料。此外，少量的Bi 2212与SrZrO 3混合，以改善其冷加工的延展性。通过控制叠层前氧化物阻挡层的涂层厚度，将带的宽度减小到3 mm以下，并将其长度小于5 mm的细丝小心地扭曲，即使在交流垂直磁场中，耦合频率fc也超过250 Hz。在77 K和自场下，紧扭阻带的临界电流密度Jc在12-14 kA/cm ~ 2之间，比非紧扭阻带的临界电流密度Jc（=18 kA/cm ~ 2）低25%。据我们所知，这是Bi_（2223）超导带材在隔离状态下同时获得J_c>12 kA/cm ~ 2和f_c>250 Hz的第一个结果。在50 mT和50 Hz下，这些扭曲的屏障带显示出比具有完全耦合的细丝的常规4 mm宽的带低60-70%的垂直场损耗。
This paper presents our recent activities for the development of low-loss Bi2223 tapes with interfilamentary oxide barriers. In order to suppress the side effect on Bi2223 phase formation during sintering process, SrZrO3was selected as barrier materials. Moreover, small amount of Bi2212 was mixed with SrZrO3to improve their ductility for cold working. By controlling coating thickness of oxide barriers before stacking, reducing a tape width below 3 mm and careful twisting of the filaments with its length below 5 mm, coupling frequencyfcexceeded 250 Hz even in an AC perpendicular magnetic field. Critical current densitiesJcof tightly twisted barrier tapes were ranged in 12–14 kA/cm2at 77 K and self-field, which was 25% lower than the nontwisted one (=18 kA/cm2). To our knowledge, this is the first result to achieve bothJc>12 kA/cm2andfc>250 Hz simultaneously for Bi2223 tapes in an isolated state. These twisted barrier tapes showed 60–70% lower perpendicular field losses than a conventional 4 mm-width tape with fully coupled filaments at 50 mT and 50 Hz.