Microwave frequency comb attributed to the formation of dipoles at the surface of a semiconductor by a mode-locked ultrafast laser
Microwave frequency comb attributed to the formation of dipoles at the surface of a semiconductor by a mode-locked ultrafast laser
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微波频率梳归因于锁模超快激光器在半导体表面形成偶极子
DOI：
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发表时间：
2012
期刊：
影响因子：
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通讯作者：
D. Yarotski
中科院分区：
文献类型：
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作者：
M. Hagmann;S. Pandey;A. Nahata;A. Taylor;D. Yarotski
Zhang在1990年证明了通过聚焦锁模超快激光在半导体表面上产生太赫兹辐射，其他人已经对这种效应进行了大量的测量和分析。我们已经测量了产生这种辐射的浪涌电流，表明这种电流，以及可能的辐射，是频率梳，其谐波是激光脉冲重复率的整数倍。通过将半导体置于隧道结中，电流中的谐波增强，其中基波增加8db，直流隧道电流为100pa。
The generation of terahertz radiation by focusing a mode-locked ultrafast laser on the surface of a semiconductor was demonstrated by Zhang in 1990, and others have made numerous measurements and analyses of this effect. We have measured the surge current which causes this radiation, showing that this current, and presumably the radiation, are frequency combs with harmonics at integer multiples of the pulse repetition rate of the laser. The harmonics in the current are enhanced by placing the semiconductor in a tunneling junction, where the fundamental is increased by 8 dB with a DC tunneling current of 100 pA.