A three terminal varactor for RF IC's in standard CMOS technology
A three terminal varactor for RF IC's in standard CMOS technology
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采用标准 CMOS 技术的 RF IC 三端子变容二极管
DOI：
10.1109/16.831011
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发表时间：
2000
影响因子：
3.1
通讯作者：
R. Castello
中科院分区：
文献类型：
--
作者：
F. Svelto;S. Manzini;R. Castello
提出了一种用于射频集成电路的三端金属氧化硅变容二极管，工作在积累和深耗尽之间，样机采用0.35/SPL Mu/m标准工艺实现，电容调谐为3.1：1。在1800 MHz时，相应的最小Q为23。所提出的变容二极管可用作高集成度CMOS光收发器中压控振荡器的调谐元件。
A three terminal metal-oxide-silicon varactor operated between accumulation and deep depletion is proposed for RF IC's. Prototypes, realized in a 0.35 /spl mu/m standard CMOS technology, show a 3.1:1 capacitance tuning. The corresponding minimum Q is 23 at 1800 MHz. The proposed varactor lends itself as tuning element of VCO's in highly integrated CMOS transceivers.