Spin-dependent recombination in Czochralski silicon containing oxide precipitates
Spin-dependent recombination in Czochralski silicon containing oxide precipitates
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DOI：
10.1063/1.3675449
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发表时间：
2011-10
影响因子：
3.2
通讯作者：
V. Lang;J. Murphy;R. Falster;J. Morton
中科院分区：
文献类型：
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作者：
V. Lang;J. Murphy;R. Falster;J. Morton
电检测磁共振用于识别一组直拉法生长的硅样品中的复合中心处理包含应变氧化物沉淀物的密度范围很广（~1×109 cm-3 ~7×1010 cm-3）。测量结果表明，光激发的电荷载流子通过Pb 0和Pb 1悬空键重组，并与无沉淀材料的比较表明，这些都存在于样品表面和氧化物沉淀。电子复合率随沉淀物密度近似线性变化。观察和讨论了铁硼和间隙铁产生的额外的共振线。我们的观察结果是不一致的辐射热加热和解释的自旋相关的重组。因此，电检测磁共振是一种非常强大和灵敏的光谱技术，以选择性地探测现代光伏器件材料中的复合中心。
Electrically detected magnetic resonance is used to identify recombination centers in a set of Czochralski-grown silicon samples processed to contain strained oxide precipitates with a wide range of densities (~1×109 cm-3 to ~7×1010 cm-3). Measurements reveal that photo-excited charge carriers recombine through Pb0 and Pb1 dangling bonds, and comparison to precipitate-free material indicates that these are present at both the sample surface and the oxide precipitates. The electronic recombination rates vary approximately linearly with precipitate density. Additional resonance lines arising from iron-boron and interstitial iron are observed and discussed. Our observations are inconsistent with bolometric heating and interpreted in terms of spin-dependent recombination. Electrically detected magnetic resonance is thus a very powerful and sensitive spectroscopic technique to selectively probe recombination centers in modern photovoltaic device materials.