Influence of Wafer Edge Geometry on Removal Rate Profile in Chemical Mechanical Polishing: Wafer Edge Roll-Off and Notch
Influence of Wafer Edge Geometry on Removal Rate Profile in Chemical Mechanical Polishing: Wafer Edge Roll-Off and Notch
复制标题
化学机械抛光中晶圆边缘几何形状对去除率分布的影响：晶圆边缘滚落和缺口
DOI：
10.1143/jjap.51.05ef01
复制
发表时间：
2012
影响因子：
1.5
通讯作者：
M. Tsujimura
中科院分区：
文献类型：
--
作者：
A. Fukuda;T. Fukuda;A. Fukunaga;M. Tsujimura
在化学机械抛光（CMP）工艺中，均匀抛光到晶片边缘附近对于减少边缘排斥和提高成品率至关重要。在这项研究中，我们研究了固有的晶圆边缘几何形状的影响，即，晶片边缘滚降和缺口，对CMP去除率曲线。我们澄清的领域中，去除率的轮廓是由晶圆边缘滚降和缺口，以及它们的强度上的去除率的轮廓的影响。此外，我们建议使用一个小缺口，以减少晶片缺口的影响，并提出了通过有限元法（FEM）分析的检查结果。
In the chemical mechanical polishing (CMP) process, uniform polishing up to near the wafer edge is essential to reduce edge exclusion and improve yield. In this study, we examine the influences of inherent wafer edge geometries, i.e., wafer edge roll-off and notch, on the CMP removal rate profile. We clarify the areas in which the removal rate profile is affected by the wafer edge roll-off and the notch, as well as the intensity of their effects on the removal rate profile. In addition, we propose the use of a small notch to reduce the influence of the wafer notch and present the results of an examination by finite element method (FEM) analysis.