Synthesis of NIR‐Emitting InAs‐Based Core/Shell Quantum Dots with the Use of Tripyrazolylarsane as Arsenic Precursor

Synthesis of NIR‐Emitting InAs‐Based Core/Shell Quantum Dots with the Use of Tripyrazolylarsane as Arsenic Precursor
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以三吡唑基二烷为砷前驱体合成 NIRâ 发射 InAsâ 基核/壳量子点

DOI:
10.1002/ppsc.201800175
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发表时间:
2018
影响因子:
2.7
通讯作者:
Eychmüller
Eychmüller
中科院分区:
材料科学3区
文献类型:
--
作者:
Tietze;Panzer;Starzynski;Guhrenz;Frenzel;Würth;Resch-Genger;Weigand;Eychmüller

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三(3,5-二甲基吡唑基)砷烷(1)作为一种低成本且便于处理的砷前体被引入用于直接合成InAs量子点(QD)。1与溶剂油胺(OLAH)进行氨基转移反应得到三油基砷烷(As(奥拉)3),在还原剂二异丁基氢化铝(DIBAL-H)或三油基膦(P(奥拉)3)存在下,通过典型的热注入方法得到InAs量子点。通过改变反应时间、所施加的还原剂的量,或者甚至更有效地通过改变铟和/或锌卤化物前体InX 3和ZnX 2(Cl、Br或I)来调节所获得的InAs核QD的尺寸。用保护性ZnS或ZnSe壳钝化所得InAs颗粒导致覆盖600和1150 nm之间的光谱范围的核/壳QD的光致发光改善。
Tris(3,5‐dimethylpyrazolyl)arsane(1)is introduced as a low‐cost and convenient to handle arsenic precursor for the straight forward synthesis of InAs quantum dots (QDs). Transamination of1with the solvent oleylamine (OLAH) gives trioleylarsane (As(OLA)3) which in the presence of the reducing agents diisobutylaluminum hydride (DIBAL‐H) or trioleylphosphane (P(OLA)3) yields InAs QDs via a typical hot injection approach. The size of the obtained InAs core QDs are tuned by varying the reaction time, the amount of the applied reducing agent, or even more effectively by changing the indium and/or zinc halide precursors, InX3, and ZnX2(Cl, Br, or I). Passivation of the resulting InAs particles with a protective ZnS or ZnSe shell results in improved photoluminescence of the core/shell QDs covering a spectral range between 600 and 1150 nm.