Microwave Hall conductivity of the two-dimensional electron gas in GaAs-AlxGa1-xAs.
Microwave Hall conductivity of the two-dimensional electron gas in GaAs-AlxGa1-xAs.
复制标题
GaAs-AlxGa1-xAs 中二维电子气的微波霍尔电导率。
DOI：
10.1103/physrevb.33.2965
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发表时间：
1986
期刊：
影响因子：
--
通讯作者：
Schlapp
中科院分区：
文献类型：
--
作者：
Kuchar;Meisels;Weimann;Schlapp
首次使用交叉波导排列在 GaAs-Al 0.35 Ga 0.65 As 的二维电子气中在微波频率下观察到量子霍尔效应的 σ xy 。这些频率比之前实验中使用的频率高 10 3–10 4 ，在之前的实验中观察到了整数量子霍尔效应的所谓低频击穿。我们的微波结果表明，这种效应不会发生在 GaAs-Al x Ga 1− x As 异质结构中。因此，我们必须排除低频下有效离域的机制以及样本中长半经典轨道的存在。
For the first time the quantum Hall effect was observed in σ xy at microwave frequencies in the two-dimensional electron gas in GaAs-Al 0.35 Ga 0.65 As using a crossed waveguide arrangement. These frequencies were 10 3–10 4 higher than those used in previous experiments where a so-called low-frequency breakdown of the integer quantum Hall effect was observed. Our microwave results show that this effect does not occur in GaAs-Al x Ga 1− x As heterostructures. Therefore, we have to rule out the mechanism of an effective delocalization at low frequencies and the existence of long semiclassical orbits in the sample.