Extracting Defect Density and Size Distributions from Product ICs
Extracting Defect Density and Size Distributions from Product ICs
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从产品 IC 中提取缺陷密度和尺寸分布
DOI：
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发表时间：
2006
影响因子：
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通讯作者：
C. Schuermyer
中科院分区：
文献类型：
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作者：
J. E. Nelson;T. Zanon;J. G. Brown;O. Poku;R. D. Blanton;Wojciech Maly;B. Benware;C. Schuermyer
缺陷密度和大小分布（DDSD）是表征过程中的点缺陷的重要参数。本文解决了随机斑点缺陷，这些缺陷影响了所有过程，目前需要大量的硅投资来表征，并提出了一种新方法来表征此类缺陷。该方法提出了一个系统，该系统通过使用可用的晶圆排序测试结果来克服硅面积的障碍，以测量没有其他硅面积的关键面积产量模型参数。在硅中制造的芯片实验的结果证实了模拟实验的结果，DDSDS测量仅使用慢速，结构性测试在产品中的过程中表征了一个过程
Defect density and size distributions (DDSDs) are important parameters for characterizing spot defects in a process. This article addresses random spot defects, which affect all processes and currently require a heavy silicon investment to characterize and a new approach is proposed for characterizing such defects. This approach presents a system that overcomes the obstacle of silicon area overhead by using available wafer sort test results to measure critical-area yield model parameters with no additional silicon area. The results of the experiment on chips fabricated in silicon confirm the results of the simulation experiment that DDSDs measurement characterizes a process in ordinary digital circuits using only slow, structural test results from the product