Influence of Frenkel defects on endurance behavior in SnO2:Cu memristors
Influence of Frenkel defects on endurance behavior in SnO2:Cu memristors
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弗兰克尔缺陷对 SnO2:Cu 忆阻器耐久性行为的影响
DOI：
10.1063/1.5084317
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发表时间：
2019
影响因子：
3.2
通讯作者：
Zhu Jinsong
中科院分区：
文献类型：
--
作者：
Mei Fang;Shen Hui;Li Liben;Zang Guozhong;Shao Ye;Liu Lin;Lei Lin;Huang Fengzhen;Lu Xiaomei;Zhu Jinsong
为了研究Frenkel缺陷对耐久性能的影响，制作了SnO2：Cu记忆阻器器件。我们在脉冲激光沉积过程中控制氧压，以获得不同的Frenkel缺陷条件。对于具有均匀Frenkel缺陷的SnO2：Cu器件，随着开关周期的增加，由于不可恢复的导电细丝碎片引起的界面势垒减少，观察到高阻状态(HRS)疲劳。在具有Frenkel缺陷浓度梯度的双层SnO2：Cu器件中，由浓度梯度产生的垂直Fick力可以驱动可移动的氧离子来抑制不可恢复碎片的形成。因此，通过抑制界面势垒的减少，改善了HRS疲劳。当梯度变大时，双层器件在几个开关周期中表现出HRS上升和粘滞开关。在这种情况下，Fick力可能会主导可移动氧离子的扩散，导致界面上氧空位的过度填充和界面势垒的增加。为了研究Frenkel缺陷对耐久行为的影响，制作了SnO2：Cu记忆阻器器件。我们在脉冲激光沉积过程中控制氧压，以获得不同的Frenkel缺陷条件。对于具有均匀Frenkel缺陷的SnO2：Cu器件，随着开关周期的增加，由于不可恢复的导电细丝碎片引起的界面势垒减少，观察到高阻状态(HRS)疲劳。在具有Frenkel缺陷浓度梯度的双层SnO2：Cu器件中，由浓度梯度产生的垂直Fick力可以驱动可移动的氧离子来抑制不可恢复碎片的形成。因此，通过抑制界面势垒的减少，改善了HRS疲劳。当梯度变大时，双层器件在几个开关周期中表现出HRS上升和粘滞开关。在这种情况下，菲克力可能主导了可移动氧离子的扩散，导致氧空位的过度填充。
SnO2:Cu memristor devices were fabricated to investigate the influence of Frenkel defects on endurance behavior. We controlled the oxygen pressure during pulsed laser deposition to obtain different Frenkel defect conditions. For SnO2:Cu devices with homogeneous Frenkel defects, high-resistance state (HRS) fatigue was observed with increasing switching cycles due to the reduction of interfacial barriers caused by unrecoverable fragments of conductive filaments. In bilayer SnO2:Cu devices with Frenkel defect concentration gradients, the vertical Fick force resulting from the concentration gradient can drive mobile oxygen ions to restrain the formation of unrecoverable fragments. Thus, HRS fatigue was improved by restraining the reduction of interfacial barriers. When the gradient becomes large, the bilayer devices demonstrate HRS rise and stuck switching in several switching cycles. In this case, the Fick force may dominate the diffusion of mobile oxygen ions, leading to the overfilling of oxygen vacancies at the interface and an increase in interfacial barriers.SnO2:Cu memristor devices were fabricated to investigate the influence of Frenkel defects on endurance behavior. We controlled the oxygen pressure during pulsed laser deposition to obtain different Frenkel defect conditions. For SnO2:Cu devices with homogeneous Frenkel defects, high-resistance state (HRS) fatigue was observed with increasing switching cycles due to the reduction of interfacial barriers caused by unrecoverable fragments of conductive filaments. In bilayer SnO2:Cu devices with Frenkel defect concentration gradients, the vertical Fick force resulting from the concentration gradient can drive mobile oxygen ions to restrain the formation of unrecoverable fragments. Thus, HRS fatigue was improved by restraining the reduction of interfacial barriers. When the gradient becomes large, the bilayer devices demonstrate HRS rise and stuck switching in several switching cycles. In this case, the Fick force may dominate the diffusion of mobile oxygen ions, leading to the overfilling of oxygen vacancies ...