Rediscovery of the Role of the i-Layer in n-ZnO/SiO2/p-GaN Through Observations from Both the ZnO and GaN Sides
Rediscovery of the Role of the i-Layer in n-ZnO/SiO2/p-GaN Through Observations from Both the ZnO and GaN Sides
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DOI：
10.1007/s11664-012-2242-z
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发表时间：
2012-09
影响因子：
2.1
通讯作者：
Yuanda Liu;H. Liang;Xiaochuan Xia;J. Bian;Rensheng Shen;Yang Liu;Yingmin Luo;G. Du
中科院分区：
文献类型：
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作者：
Yuanda Liu;H. Liang;Xiaochuan Xia;J. Bian;Rensheng Shen;Yang Liu;Yingmin Luo;G. Du
采用金属有机化学气相沉积法制备了紫外发射n-ZnO/SiO2/p-GaN器件。从n-ZnO和p-GaN两侧测量了器件的电致发光光谱。结果发现，从正面观察到一个以~ 391.3 nm为中心的窄发射峰，而从GaN侧测试则出现了三个峰（372 nm， 380 nm和390 nm）。为了解释这一显著差异，提出了一种基于载流子积累和正向偏压注入的理论机制。
Ultraviolet (UV)-emitting n-ZnO/SiO2/p-GaN devices were fabricated by metalorganic chemical vapor deposition. Electroluminescence spectra of the devices were measured from both the n-ZnO and p-GaN sides. It was found that a narrow emission peak centered at ∼391.3 nm was observed from the front side, while three peaks (372 nm, 380 nm, and 390 nm) emerged in the case of testing from the GaN side. To interpret this notable difference, a theoretical mechanism is proposed based on carrier accumulation and injection under forward bias voltage.