Discrete tunable RF-power GaN-BST transistors
Discrete tunable RF-power GaN-BST transistors
复制标题
分立式可调谐射频功率 GaN-BST 晶体管
DOI：
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发表时间：
2012
期刊：
影响因子：
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通讯作者：
W. Heinrich
中科院分区：
文献类型：
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作者：
O. Bengtsson;H. Maune;F. Golden;S. Chevtchenko;M. Sazegar;P. Kurpas;A. Wiens;R. Jakoby;W. Heinrich
在这项工作中，介绍了基于钛酸钡锶 (BST) 的新型分立可调射频功率 GaN-HEMT 晶体管的现状。在 0.9 GHz、1.3 GHz 和 2.0 GHz 的负载牵引研究中对可调谐网络的 π 设计原型进行了评估。结果表明，单个 GaN 电池 BST 网络可以处理超过 2 W 的输出功率，但网络损耗使漏极效率降低 10...35 个百分点。研究发现，BST 损耗在功率操作下与频率极其相关，但器件的线性度主要由晶体管本身的非线性度决定。该工作讨论了这一新概念目前的局限性和发展领域。
In this work the current status of a novel Barium-Strontium-Titanate (BST) based discrete tunable RF-power GaN-HEMT transistor is presented. A π-design prototype is evaluated for tunable networks in a load-pull investigation at 0.9 GHz, 1.3 GHz, and 2.0 GHz. It is shown that the individual GaN-cell BST networks can handle more than 2 W output power but the network losses reduce the drain efficiency by 10...35 percentage points. The BST losses are found to be extremely frequency dependant under power operation but the linearity of the device is dominated by the non-linearity of the transistor itself. Present limitations and development areas of this novel concept are discussed in the work.