Preparation of nanocrystalline silicon in amorphous silicon carbide matrix
Preparation of nanocrystalline silicon in amorphous silicon carbide matrix
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DOI：
10.1143/jjap.45.l1064
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发表时间：
2006-10-01
期刊：
影响因子：
--
通讯作者：
Konagai, Makoto
中科院分区：
文献类型：
--
作者：
Kurokawa, Yasuyoshi;Miyajima, Shinsuke;Konagai, Makoto
通过对化学计量比的氢化非晶碳化硅（a-SiC：H）/富硅氢化非晶碳化硅（a-Si 1-xCx）多层膜进行热退火，成功地制备了硅量子点/非晶碳化硅多层膜。拉曼散射光谱和透射电子显微镜（TEM）显示硅量子点仅形成在a-Si 1-xCx层中。我们还发现硅量子点的尺寸可以通过a-Si 1-xCx层的厚度来控制。
We have successfully prepared silicon quantum dots/amorphous silicon carbide multilayers by the thermal annealing of stoichiometric hydrogenated amorphous silicon carbide (a-SiC:H)/silicon-rich hydrogenated amorphous silicon carbide (a-Si1-xCx) multilayers. Raman scattering spectroscopy and transmission electron microscopy (TEM) revealed that silicon quantum dots were formed in only a-Si1-xCx layers. We also found that the size of silicon quantum dots can be controlled by the thickness of a-Si1-xCx layers.