1200 V/650 V/160 A SiC+Si IGBT 3L Hybrid T-Type NPC Power Module With Enhanced EMI Shielding

1200 V/650 V/160 A SiC+Si IGBT 3L Hybrid T-Type NPC Power Module With Enhanced EMI Shielding
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DOI:
10.1109/tpel.2021.3089578
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发表时间:
2021-12
影响因子:
6.7
通讯作者:
A. Emon;Zhao Yuan;A. Mirza;A. Deshpande;M. Hassan;F. Luo
A. Emon;Zhao Yuan;A. Mirza;A. Deshpande;M. Hassan;F. Luo
中科院分区:
工程技术1区
文献类型:
--
作者:
A. Emon;Zhao Yuan;A. Mirza;A. Deshpande;M. Hassan;F. Luo

文献摘要

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三电平(3L)逆变器由于单个电流换向回路(CCL)中串联连接的开关数量的增加而遭受更高的寄生电感,导致与其两电平(2L)对应物相比,CCL的尺寸更大。因此,半导体在开关瞬态时会受到更高的电压应力和严重的振铃。虽然碳化硅(SiC)更快的开关速度通过降低开关损耗提高了整体效率,但更快的电压和电流梯度(dv/dt和di/dt)会产生电磁干扰(EMI)噪声,需要更大和更复杂的滤波器级设计。为了解决这个问题,提出了一种优化的3L T型中性点箝位功率模块,该模块采用额定电压为1200 V/160 A的开关(SiC MOSFET + Si IGBT)混合组合。两个直接键合的铜(DBC)基板已堆叠有一个垂直的电源回路,使用激光钻孔,这提供了低换向回路电感低至4.6 nH的主要CCL,包括引线键合。其他相关的CCL也已确定和优化。封装中的附加DBC将充当EMI屏蔽。EMI噪声与传统功率模块相比,共模噪声降低了21 dB。
Three-level (3L) inverters suffer from higher parasitic inductance due to the increased number of series-connected switches in a single current commutation loop (CCL) results in a larger size of CCL compared to their two-level (2L) counterparts. As such, semiconductors are subjected to higher voltage stress and severe ringing at the switching transient. While silicon carbide's (SiC) faster switching speed improves overall efficiency by reducing switching loss, the faster voltage, and current gradient (dv/dt and di/dt) generate electromagnetic interference (EMI) noise, requiring a larger and complicated filter stage design. To solve this problem, an optimized 3L T-type neutral point clamped power module has been proposed with a hybrid combination of the switch (SiC mosfet + Si IGBT) rated for 1200 V/160 A. Two direct bonded copper (DBC) substrates have been stacked to have a vertical power loop using laser-drilled vias, which provides low commutation loop inductance as low as 4.6 nH for the major CCLs including the wire bond. Other associated CCLs have also been identified and optimized. Additional DBC in the package will be acting as an EMI shield. The EMI noise has been compared to a traditional power module and a 21 dB reduction of common-mode noise has been observed.