Non-Arrhenius Degradation of AlGaN/GaN HEMTs Grown on Bulk GaN Substrates
Non-Arrhenius Degradation of AlGaN/GaN HEMTs Grown on Bulk GaN Substrates
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在块状 GaN 衬底上生长的 AlGaN/GaN HEMT 的非阿累尼乌斯退化
DOI：
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发表时间：
2012
影响因子：
4.9
通讯作者：
Martin Kuball
中科院分区：
文献类型：
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作者：
M. Ťapajna;N. Killat;J. Moereke;T. Paskova;K. Evans;J. Leach;X. Li;U. Ozgur;H. Morkoç;K. Chabak;A. Crespo;J. Gillespie;R. Fitch;M. Kossler;D. Walker;M. Trejo;G. Via;J. Blevins;Martin Kuball
使用电学和光学方法研究了在体氮化镓衬底上加工的氮化铝镓/氮化镓高电子迁移率晶体管（AlGaN/GaN HEMTs）的可靠性，结果表明随着基板温度（Tb）升高，退化程度降低。发现在本征和非本征HEMT区域空间定位的陷阱产生在室温Tb下进行关态偏置应力时最为显著，而将Tb升高到150°C会减少栅极周边下方的陷阱产生。这归因于热电子驱动的退化，因为在氮化镓上氮化镓器件中它应该比与缺陷相关的退化机制更占主导地位。
The reliability of AlGaN/GaN HEMTs processed on bulk GaN substrates was studied using electrical and optical methods, showing a decreasing degradation with increasing baseplate temperature (Tb). Generation of traps spatially located in both intrinsic and extrinsic HEMT regions was found to be most pronounced for OFF-state bias stress performed at room Tb, while increasing Tb up to 150°C decreased trap generation underneath the gate perimeter. This was attributed to degradation driven by hot electrons as it should dominate over defect-related degradation mechanisms in GaN-on-GaN devices.