Flexible Electronics: Highly Flexible and Transparent Multilayer MoS2 Transistors with Graphene Electrodes (Small 19/2013)
Flexible Electronics: Highly Flexible and Transparent Multilayer MoS2 Transistors with Graphene Electrodes (Small 19/2013)
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DOI：
10.1002/smll.201370112
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发表时间：
2013-10
期刊：
影响因子：
13.3
通讯作者：
Jongwon Yoon;Woojin Park;Ga-Yeong Bae;Yonghun Kim;Hun Soo Jang;Yujun Hyun;S. Lim;Y. H. Kahng
中科院分区：
文献类型：
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作者：
Jongwon Yoon;Woojin Park;Ga-Yeong Bae;Yonghun Kim;Hun Soo Jang;Yujun Hyun;S. Lim;Y. H. Kahng
基于剥离的MoS 2沟道和CVD生长的石墨烯电极的高度柔性和透明的晶体管由W. K. Hong，HC Ko，and co-workers on page 3295.引入2D纳米材料提供了高机械柔性（可用弯曲半径：±2.2 mm）、光学透射率（74%）和高电流开/关比（> 10 4），平均场效应迁移率为1.444.7 cm 2 V-1 s-1，所有这些都不能通过由MoS 2有源沟道/金属电极或石墨烯沟道/石墨烯电极组成的其他晶体管实现。特别地，MoS 2/石墨烯界面具有1022 meV的低肖特基势垒，这与MoS 2/金属界面相当。
A highly flexible and transparent transistor based on an exfoliated MoS 2 channel and CVD-grown graphene electrodes is reported by W.-K. Hong, HC Ko, and co-workers on page 3295. Introducing 2D nanomaterials provides high mechanical flexibility (available bending radius:±2.2 mm), optical transmittance (74%), and high current on/off ratio (> 10 4) with an average field effect mobility of≈ 4.7 cm 2 V− 1 s− 1, all of which cannot be achieved by other transistors consisting of a MoS 2 active channel/metal electrodes or graphene channel/graphene electrodes. In particular, the MoS 2/graphene interface has a low Schottky barrier of≈ 22 meV, which is comparable to the MoS 2/metal interface.