Catalytic oxidation of (001)Si in the presence of Cu3Si at room temperature
Catalytic oxidation of (001)Si in the presence of Cu3Si at room temperature
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Cu3Si 存在下室温下 (001)Si 的催化氧化
DOI：
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发表时间：
1993
期刊：
影响因子：
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通讯作者：
Lun
中科院分区：
文献类型：
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作者：
C. Liu;Lun
采用透射电子显微镜（TEM）和X射线衍射（XRD）研究了Cu 3Si催化（001）Si的室温氧化。对于（001）Si上的Cu ′-Cu 3Si薄层，XRD分析表明，Cu和Cu的体积分数分别随着在空气中暴露时间的增加和减少。TEM显示在SiO2层中存在高密度的Cu沉淀物。在空气中长时间暴露后，观察到Cu沉淀物形成不规则的网络。发现硅上的起始Cu（因此Cu 3Si）层的厚度是确定氧化行为的关键因素。基于微观结构的演变数据，催化Cu 3Si机制的部分重构被认为是Cu 3Si催化的硅室温氧化的主导过程。
Room temperature oxidation of (001)Si catalyzed by Cu3Si has been investigated by transmission electron microscopy (TEM) and x‐ray diffractometry (XRD). For η‘‐Cu3Si thin layer on (001)Si, XRD analysis showed that volume fractions η‘‐Cu3Si and Cu decrease and increase with the exposure time in air, respectively. TEM revealed the presence of a high density of Cu precipitates in the SiO2 layer. After prolonged exposure in air, the Cu precipitates were observed to form an irregular network. The thickness of starting Cu, hence Cu3Si, layer on silicon was found to be a critical factor in determining the oxidation behavior. Based on the microstructural evolution data, a partial reconstitution of catalytic Cu3Si mechanism is proposed to be the dominant process for the room‐temperature oxidation of silicon catalyzed by Cu3Si.