Production of polarized electron beam with sub-nanosecond multi-bunch structure from superlattice photocathode
Production of polarized electron beam with sub-nanosecond multi-bunch structure from superlattice photocathode
复制标题
超晶格光电阴极产生亚纳秒多束团结构的偏振电子束
DOI：
10.1016/s0168-9002(00)00717-8
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发表时间：
2000
影响因子：
1.4
通讯作者：
M. Yoshioka
中科院分区：
文献类型：
--
作者：
K. Togawa;T. Nakanishi;T. Baba;F. Furuta;H. Horinaka;Y. Kurihara;H. Matsumoto;T. Matsuyama;T. Nishitani;S. Okumi;T. Omori;C. Suzuki;Y. Takeuchi;K. Wada;M. Yamamoto;M. Yoshioka
用表面重掺杂的InGaAs-AlGaAs应变层超晶格光电阴极首次产生了亚纳秒多束团结构的极化电子束。提取的电荷为0.6×10~(10)E−/束团是由50keV电子枪的空间电荷极限决定的。在间隔2.8 ns的第二团簇中，没有观察到半导体光电阴极负电子亲和力表面所特有的表面电荷限制现象引起的多团簇效应。我们认为重掺杂表面的超晶格光电阴极是未来直线对撞机的最佳光电阴极。
Polarized electron beam with sub-nanosecond multi-bunch structure has been first produced from an InGaAs–AlGaAs strained-layer superlattice photocathode with heavy surface doping. The extracted charge of 0.6×1010e−/bunch is determined by the space charge limit of the 50keV gun. The multi-bunch effect due to the surface charge limit phenomenon, which is peculiar to a negative electron affinity surface of semiconductor photocathode, is not observed in the second bunch separated by 2.8 ns . We conclude that a superlattice photocathode with a heavily doped surface is the best photocathode for the future linear colliders.