On understanding and driving SiC power JFETs

On understanding and driving SiC power JFETs
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关于理解和驱动 SiC 功率 JFET

DOI：
10.1109/apec.2011.5744727
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发表时间：
2011
期刊：
2011 Twenty-Sixth Annual IEEE Applied Power Electronics Conference and Exposition (APEC)
影响因子：
--
通讯作者：
T. Undeland
T. Undeland
中科院分区：
--
文献类型：
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作者：
I. Abuishmais;S. Basu;T. Undeland

文献摘要

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相似文献

随着正常关断的三端SiC vjfet的商业化，考虑到其出色的低开关损耗特性、高温工作和高额定电压能力，它们的接受度有望显著增长。本文研究了栅极驱动对器件开关特性的影响，并重点介绍了驱动栅极驱动的设计策略。
With the commercial availability of normally-off three-terminal SiC VJFETs, their acceptance is expected to grow significantly in consideration to their excellent low switching loss characteristics, high temperature operation and high voltage rating capabilities. This paper investigates the influence of the gate drive on the switching characteristics of the device and highlights design strategies for driving them.