Magnetic semiconductors based on quaternary Heusler compounds
Magnetic semiconductors based on quaternary Heusler compounds
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基于四元霍斯勒化合物的磁性半导体
DOI：
10.1016/j.commatsci.2018.04.023
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发表时间：
2018
影响因子：
3.3
通讯作者：
Wang Wenhong
中科院分区：
文献类型：
--
作者：
Wang Yue;Zhang Xiaoming;Ding Bei;Hou Zhipeng;Liu Enke;Liu Zhongyuan;Xi Xuekui;Zhang Hongwei;Wu Guangheng;Wang Wenhong
基于斯莱特-鲍林规则，总结出一种简单有效的寻找磁性半导体的半经验方法。在该方法的指导下，磁性半导体FeVNbAl、FeVNbGa、FeCrScSi、FeCrScGe、FeCrScSn、FeCrYSi、MnCrScSb、FeTiZrSb、MnVNbSn、FeVScSb、FeVYSb和CoVScSi等很容易找到，能带结构表明它们大多数是窄带隙半导体，有些甚至接近于自旋无带隙半导体。在FeVScSb中发现的最大带隙为0.373 eV，并且在FeVNbGa中发现的最小带隙为0.063 eV。这12种新的磁性半导体材料极大地丰富了磁性半导体材料的种类，而且这种方法可以帮助其他研究人员发现更多的磁性半导体材料。
Based on Slater-Pauling rules a simple and effective semiempirical method for searching magnetic semiconductors were concluded. At the guild of this method magnetic semiconductors FeVNbAl, FeVNbGa, FeCrScSi, FeCrScGe, FeCrScSn, FeCrYSi, MnCrScSb, FeTiZrSb, MnVNbSn, FeVScSb, FeVYSb and CoVScSi were easily found. Band structure shows most of them are narrow bandgap semiconductors, and some are even close to spin gapless semiconductors. The maximal band gap is 0.373 eV found in FeVScSb, and the minimal band gap is 0.063 eV found in FeVNbGa. Those twelve new magnetic semiconductors well enrich magnetic semiconductor family and what's more this method may help other researchers to find more.