The use of high aspect ratio photoresist (SU-8) for super-hydrophobic pattern prototyping
The use of high aspect ratio photoresist (SU-8) for super-hydrophobic pattern prototyping
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DOI：
10.1088/0960-1317/14/10/013
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发表时间：
2004-10-01
影响因子：
2.3
通讯作者：
Roach, P
中科院分区：
文献类型：
--
作者：
Shirtcliffe, NJ;Aqil, S;Roach, P
在这项工作中，我们提出了一种可靠的技术，用于生产大面积的高纵横比图案，并描述了它们作为模型超疏水系统的使用。SU-8可能的高厚度和直侧壁被用来产生密集的小柱图案。这些光刻胶图案可以直接使用，而不需要微成型。给出了一种允许抗蚀剂厚度在较大范围内变化的方法，并使用底部抗反射层来简化反射基板上的图案。这种图案技术允许快速测试润湿理论，因为图案的大小和深度可以简单地改变，样品可以生产足够数量的实验室使用。我们展示了水的静态接触角如何随一个样本图案的图案高度而变化，以及使用高纵横比图案的静态和动态接触角如何随尺寸而变化。
In this work we present a reliable technique for the production of large areas of high aspect-ratio patterns and describe their use as model super-hydrophobic systems. The high thickness and straight sidewalls possible with SU-8 were used to generate dense patterns of small pillars. These photoresist patterns could be used directly, without the need for micromoulding. A method is given allowing resist thickness to be varied over a wide range and a bottom antireflective layer was used to simplify patterning on reflective substrates. This patterning technique allows rapid testing of wetting theories, as pattern size and depth can be varied simply and samples can be produced in sufficient numbers for laboratory use. We show how the static contact angle of water varies with pattern height for one sample-pattern and how static and dynamic contact angles vary with dimension using high aspect-ratio patterns.