Characterization of reversed domain noise voltage for perpendicular double-layer media
Characterization of reversed domain noise voltage for perpendicular double-layer media
复制标题
垂直双层介质的反向域噪声电压表征
DOI：
10.3379/jmsjmag.29.891
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发表时间：
2005
影响因子：
--
通讯作者：
Y. Nakamura
中科院分区：
文献类型：
--
作者：
M. Hashimoto;K. Miura;H. Muraoka;H. Aoi;Y. Nakamura
在垂直磁记录中，介质噪声特性是提高磁头和磁盘性能以及制定信号处理策略的必要条件。通过将噪声分为跃迁抖动、脉宽呼吸和反转畴噪声，研究了不同SiO2浓度的CoPtCr-SiO2垂直记录介质的介质噪声。由于反转畴噪声幅度在跃迁附近较小，噪声功率与线性密度成比例地降低，并且在高于200 kFCI的密度处消失。因此，高线性密度下的信噪比由抖动噪声和脉冲宽度呼吸决定。尽管SiO2浓度越高，反畴噪声越大，但误码性能得到了改善。因此，重要的参数是过渡抖动，并且反畴噪声的影响很小。
In perpendicular magnetic recording, medium noise characterization is necessary to improve head and disk performance, and to establish the signal processing strategy. We examined the medium noise of CoPtCr-SiO 2 perpendicular recording media with various SiO 2 concentrations deposited by separating noise into transition jitter, pulse width breathing, and reversed domain noise. Since the reversed domain noise magnitude was small near transitions, the noise power decreased in proportion to linear density, and disappeared at densities higher than 200 kFCI. Thus, the signal-to-noise ratios at high linear densities were determined by jitter noise and pulse width breathing. Although the reversed domain noise increased for disks with higher SiO 2 concentrations, error rate performance was improved. Therefore, the significant parameter was the transition jitter, and the influence of reversed domain noise was small.