Scanning transmission electron microscopy strain measurement from millisecond frames of a direct electron charge coupled device
Scanning transmission electron microscopy strain measurement from millisecond frames of a direct electron charge coupled device
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DOI：
10.1063/1.4767655
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发表时间：
2012-11-19
影响因子：
4
通讯作者：
Rosenauer, Andreas
中科院分区：
文献类型：
--
作者：
Mueller, Knut;Ryll, Henning;Rosenauer, Andreas
将高速直接电子探测系统引入透射电子显微镜领域，并应用于半导体纳米结构的应变测量。特别是，直径为0.5nm的聚焦电子探针在具有交替的压缩和拉伸应变的四重量子层堆叠上扫描，并且衍射盘已经记录在闪烁体上。自由直接电子探测器的帧时间为1 ms。我们表明，所应用的算法可以准确地检测布拉格光束的位置，尽管一个显着的点扩展每个300 kV的电子在检测过程中的原因在无干扰摄像头上对于毫秒曝光，我们发现应变可以以1：3 x 10（-3）的精度测量，从而使得，e。例如，在一个实施例中，在40 s内以0.5 nm分辨率在100 × 100 nm（2）区域内进行应变绘图。(C)2012年美国物理学会。[http：//dx.doi.org/10.1063/1.4767655]
A high-speed direct electron detection system is introduced to the field of transmission electron microscopy and applied to strain measurements in semiconductor nanostructures. In particular, a focused electron probe with a diameter of 0.5 nm was scanned over a fourfold quantum layer stack with alternating compressive and tensile strain and diffracted discs have been recorded on a scintillator-free direct electron detector with a frame time of 1 ms. We show that the applied algorithms can accurately detect Bragg beam positions despite a significant point spread each 300 kV electron causes during detection on the scintillator-free camera. For millisecond exposures, we find that strain can be measured with a precision of 1: 3 x 10(-3), enabling, e. g., strain mapping in a 100 x 100 nm(2) region with 0.5 nm resolution in 40 s. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4767655]