Exciton-exciton interaction engineering in coupled GaN quantum dots
Exciton-exciton interaction engineering in coupled GaN quantum dots
复制标题
耦合 GaN 量子点中的激子-激子相互作用工程
DOI：
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发表时间：
2002
期刊：
影响因子：
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通讯作者：
F. Rossi
中科院分区：
文献类型：
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作者：
S. D. Rinaldis;I. D’Amico;F. Rossi
我们通过直接对角化方法对垂直耦合氮化镓量子点的多激子光学响应进行了全面的三维研究。所提出的分析对于理解少粒子/激子相互作用的基本特性至关重要，更重要的是，可能在基于半导体的量子信息处理方案的设计/优化中发挥重要作用。我们特别关注点间激子-激子耦合，这是最近提出的全光量子处理器的关键成分。我们的分析表明，双激子位移和振荡器强度与这种实现方案兼容的现实参数有很大的窗口。
We present a fully three-dimensional study of the multiexciton optical response of vertically coupled GaN-based quantum dots via a direct-diagonalization approach. The proposed analysis is crucial in understanding the fundamental properties of few-particle/exciton interactions and, more important, may play an essential role in the design/optimization of semiconductor-based quantum information processing schemes. In particular, we focus on interdot exciton–exciton coupling, the key ingredient in recently proposed all-optical quantum processors. Our analysis demonstrates that there is a large window of realistic parameters for which both biexcitonic shift and oscillator strength are compatible with such implementation schemes.